Central Semiconductor
GES6016
Bipolar Transistors - BJT NPN 70Vcbo 70Vces 60Vces 5.0Vebo 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- GES6016
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 70 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 800 mA
- Gain Bandwidth Product fT
- 425 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
Show more parameters (3)
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 130
- Pd - Power Dissipation
- 1 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.