ON Semiconductor
2SD1816S-H
Bipolar Transistors - BJT BIP NPN 4A 100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1816
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
7 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 70
- Pd - Power Dissipation
- 1 W
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.