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Microchip Technology

APT84M50B2

MOSFETs MOSFET MOS8 500 V 84 A TO-247 MAX

Basic Information

View Datasheet ↗
Manufacturer
Microchip
Brand
Microchip Technology
Product Category
MOSFETs
Package
T-MAX-3
Mounting Style
Through Hole
Packaging
Tube

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
84 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs - Gate-Source Voltage
- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
340 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.135 kW
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
PH
Fall Time
50 ns
Forward Transconductance - Min
65 S
Rise Time
70 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
155 ns
Typical Turn-On Delay Time
60 ns
Unit Weight
0.208116 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

APT84M50B2 Specifications and Datasheet | ChipSourceHub