onsemi
NTMYS3D3N06CLTWG
MOSFETs 60V 3.0mOhms 133A Single N-Channel
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- NTMYS3D3N06CL
- Package
- LFPAK-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 133 A
- Rds On - Drain-Source Resistance
- 3 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Qg - Gate Charge
- 18.4 nC, 40.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 100 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- PH
- Fall Time
- 96 ns
- Forward Transconductance - Min
- 130 S
- Rise Time
- 58 ns
- Transistor Type
- 1-N-Channel
- Typical Turn-Off Delay Time
- 66 ns
- Typical Turn-On Delay Time
- 15 ns
- Unit Weight
- 0.002642 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.