Toshiba
TK11A45D(STA4,Q,M)
MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TK11A45D
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 450 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 500 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 20 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 40 W
- Configuration
- Single
Show more parameters (10)
- Tradename
- MOSVII
- Height
- 15 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.5 mm
- Forward Transconductance - Min
- 0.8 S
- Fall Time
- 10 ns
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 75 ns
- Typical Turn-On Delay Time
- 60 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.