Toshiba
RN1113MFV(TPL3)
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1113MFV
- Package
- VESM-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 700
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 50 V
- DC Current Gain hFE Max
- 120 @ 1mA @ 5V
- Emitter- Base Voltage VEBO
- 5 V
- Height
- 0.5 mm
- Length
- 1.2 mm
Show more parameters (1)
- Width
- 0.8 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.