Central Semiconductor
2N6308
Bipolar Transistors - BJT NPN 350Vceo 700Vcbo 8Vebo 8A 4A 125W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6308
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 350 V
- Collector- Base Voltage VCBO
- 700 V
- Emitter- Base Voltage VEBO
- 8 V
- Collector-Emitter Saturation Voltage
- 5 V
- Gain Bandwidth Product fT
- 5 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 60 at 3 A, 5 V
- Continuous Collector Current
- 8 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 3 at 8 A, 5 V
- Pd - Power Dissipation
- 125 W
- Part # Aliases
- 2N6308 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.