UnitedSiC
UF3C065040K4S
MOSFET 650V 42m? SiC Cascode Fast
Basic Information
View Datasheet ↗- Manufacturer
- UnitedSiC
- Product Category
- MOSFET
- Series
- UF3C
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 54 A
- Rds On - Drain-Source Resistance
- 52 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 43 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 326 W
Show more parameters (4)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 N-Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.