ON Semiconductor
BD435G
Bipolar Transistors - BJT BIP NPN 4A 22V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BD435
- Package
- TO-225-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 32 V
- Collector- Base Voltage VCBO
- 32 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 11.04 mm
- Length
- 7.74 mm
Show more parameters (4)
- Width
- 2.66 mm
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 36000 mW
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.