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Diodes Incorporated

MMSTA56Q-7-F

Bipolar Transistors - BJT General Purpose Transistor

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
MMSTA56Q
Package
$0.073
Mounting Style
SMD/SMT
Packaging
6 V
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Collector- Base Voltage VCBO
- 80 V
Emitter- Base Voltage VEBO
- 4 V
Collector-Emitter Saturation Voltage
- 0.25 V
Gain Bandwidth Product fT
50 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 500 mA
DC Collector/Base Gain hfe Min
100
Show more parameters (2)
Pd - Power Dissipation
200 mW
Qualification
AEC-Q101

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMSTA56Q-7-F Specifications and Datasheet | ChipSourceHub