ON Semiconductor
MMBT5401WT1G
Bipolar Transistors - BJT PNP HIGH VOLTAGE TRANSIST
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMBT5401W
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 150 V
- Collector- Base Voltage VCBO
- - 160 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 200 mV
- Maximum DC Collector Current
- - 500 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240 at - 10 mA, - 5 VDC
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 60 at - 10 mA, - 5 VDC
- Pd - Power Dissipation
- 400 mW
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.