Central Semiconductor
2N3583
Bipolar Transistors - BJT NPN High Power
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3583
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 175 V
- Collector- Base Voltage VCBO
- 250 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 10 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 1 A
- Pd - Power Dissipation
- 35 W
- Part # Aliases
- 2N3583 PBFREE
Show more parameters (1)
- Unit Weight
- 0.206000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.