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Diodes Incorporated

BCX5316-13R

Bipolar Transistors - BJT PNP Med PWR -1A 10 and 16 -500mV

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
BCX53
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 80 V
Collector- Base Voltage VCBO
- 100 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 200 mA
Gain Bandwidth Product fT
150 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
250 at - 150 mA, - 2 V
Continuous Collector Current
- 100 mA
Show more parameters (2)
DC Collector/Base Gain hfe Min
40 at - 150 mA, - 2 V
Pd - Power Dissipation
1 W

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BCX5316-13R Specifications and Datasheet | ChipSourceHub