Central Semiconductor
2N3055
Bipolar Transistors - BJT 100Vcbo 70Vcer 60Vceo 15A 115W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1.1 V
- Maximum DC Collector Current
- 15 A
- Gain Bandwidth Product fT
- 2.5 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 15 A
Show more parameters (3)
- Pd - Power Dissipation
- 115 W
- Part # Aliases
- 2N3055 PBFREE
- Unit Weight
- 0.412705 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.