Nexperia
NHUMB1F
Bipolar Transistors - BJT The factory is currently not accepting orders for this product.
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 10 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 235 mW
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- MY
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- - 60
- DC Current Gain hFE Max
- 10
- Part # Aliases
- 934661424135
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.