MACOM
GTVA126001EC-V1-R0
GaN FETs GaN HEMT 50V 1.2-1.4GHz 600W
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- H-36248-2
- Mounting Style
- Screw Mount
- Packaging
- MouseReel
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 10 A
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Country of Origin
- US
- Gain
- 18 dB
- Maximum Operating Frequency
- 1.4 GHz
- Minimum Operating Frequency
- 1.2 GHz
- Output Power
- 600 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.