Toshiba
TPWR8004PL,L1Q
MOSFET N-CH Mosfet 40V 150A 8DSOP
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TPWR8004PL
- Package
- DSOP Advance-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 150 A
- Rds On - Drain-Source Resistance
- 800 uOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.4 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 103 nC
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 170 W
- Configuration
- Single
Show more parameters (11)
- Channel Mode
- Enhancement
- Tradename
- U-MOSIX-H
- Height
- 0.73 mm
- Length
- 5 mm
- Transistor Type
- 1 N-Channel
- Width
- 5 mm
- Fall Time
- 14 ns
- Rise Time
- 13 ns
- Typical Turn-Off Delay Time
- 63 ns
- Typical Turn-On Delay Time
- 26 ns
- Unit Weight
- 0.003457 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.