Toshiba
TTA1943(Q)
Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTA1943
- Package
- 2-21F1A-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 230 V
- Collector- Base Voltage VCBO
- - 230 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 3 V
- Maximum DC Collector Current
- - 15 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160
Show more parameters (4)
- Continuous Collector Current
- - 15 A
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 150 W
- Unit Weight
- 0.194007 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.