ROHM Semiconductor
2SC5585E3TL
Bipolar Transistors - BJT NPN, SOT-416, 12V 0.5A, Low VCE(sat) Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-416-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 15 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 150 mW
- Gain Bandwidth Product fT
- 320 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
- Country of Origin
- JP
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 270 at 10 mA, 2 V
- DC Current Gain hFE Max
- 680 at 10 mA, 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.