NXP Semiconductors
BFU710F,115
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF Bipolar Transistors
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- DC Collector/Base Gain hfe Min
- 200
- Collector- Emitter Voltage VCEO Max
- 2.8 V
- Emitter- Base Voltage VEBO
- 1 V
- Continuous Collector Current
- 10 mA
- Operating Frequency
- 110 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 136 mW
- Part # Aliases
- 934064613115
- Unit Weight
- 0.000235 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.