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onsemi

FDS86267P

MOSFETs PT5 150V/20V Pch PowerTrench Mosfet

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
FDS86267P
Package
SOIC-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
2.2 A
Rds On - Drain-Source Resistance
255 mOhms
Vgs - Gate-Source Voltage
- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage
3 V
Qg - Gate Charge
16 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
2.5 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
PowerTrench
Configuration
Single
Country of Origin
TH
Fall Time
5.7 ns
Forward Transconductance - Min
6.8 S
Rise Time
2.5 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
17 ns
Typical Turn-On Delay Time
9.7 ns
Unit Weight
0.004586 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FDS86267P Specifications and Datasheet | ChipSourceHub