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onsemi

MJD41CT4G

Bipolar Transistors - BJT 6A 100V 20W NPN

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MJD41C
Package
DPAK-3 (TO-252-3)
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
6 A
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1.5 V
Pd - Power Dissipation
20 W
Gain Bandwidth Product fT
3 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
6 A
Country of Origin
CN
DC Collector/Base Gain hfe Min
30
Unit Weight
0.009185 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MJD41CT4G Specifications and Datasheet | ChipSourceHub