Central Semiconductor
CXT5551 TR
Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 6.0V 600mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CXT5
- Package
- SOT-89
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250 at 10 mA, 5 V
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 80 at 10 mA, 5 V
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- CXT5551 PBFREE TR
- Unit Weight
- 0.000529 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.