onsemi
2N5551BU
Bipolar Transistors - BJT NPN Transistor General Purpose
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5551
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 600 mA
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (7)
- Continuous Collector Current
- 600 mA
- Country of Diffusion
- MY
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 80
- DC Current Gain hFE Max
- 250
- Part # Aliases
- 2N5551BU_NL
- Unit Weight
- 0.007055 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.