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Diodes Incorporated

ZXTP25020DFHTA

Bipolar Transistors - BJT PNP 20V HIGH GAIN

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
ZXTP25020
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
60 mV
Maximum DC Collector Current
- 4 A
Gain Bandwidth Product fT
290 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
900 at - 10 mA, - 2 V
Height
1 mm
Show more parameters (6)
Length
3.05 mm
Width
1.4 mm
Continuous Collector Current
- 4 A
DC Collector/Base Gain hfe Min
20 at - 10 A, - 2 V
Pd - Power Dissipation
1810 mW
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZXTP25020DFHTA Specifications and Datasheet | ChipSourceHub