Diodes Incorporated
ZXTD619MCTA
Bipolar Transistors - BJT Dual 50V NPN Low Sat 4A Ic 68mOhm 6A HFE
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTD619
- Package
- DFN3020B-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 270 mV
- Maximum DC Collector Current
- 6 A
- Gain Bandwidth Product fT
- 165 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 200 mA, 2 V
- DC Collector/Base Gain hfe Min
- 300 at 200 mA, 2 V
Show more parameters (1)
- Pd - Power Dissipation
- 2.45 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.