ROHM Semiconductor
SP8M51HZGTB
MOSFETs AECQ
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- SOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel, P-Channel
- Number of Channels
- 2 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 2.5 A, 3 A
- Rds On - Drain-Source Resistance
- 170 mOhms, 290 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V, 2.5 V
- Qg - Gate Charge
- 8.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Dual
- Country of Origin
- TH
- Fall Time
- 14 ns, 19 ns
- Forward Transconductance - Min
- 3.5 S
- Rise Time
- 13 ns, 13 ns
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time
- 50 ns, 75 ns
- Typical Turn-On Delay Time
- 13 ns, 15 ns
- Part # Aliases
- SP8M51HZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.