onsemi
FCP110N65F
MOSFETs SuperFET2 650V, 110mohm
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- MOSFETs
- Series
- FCP110N65F
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
23 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 35 A
- Rds On - Drain-Source Resistance
- 110 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Qg - Gate Charge
- 98 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 357 W
Show more parameters (11)
- Channel Mode
- Enhancement
- Tradename
- SuperFET II FRFET
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 5.7 ns
- Forward Transconductance - Min
- 30 S
- Rise Time
- 21 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 89 ns
- Typical Turn-On Delay Time
- 31 ns
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.