Qorvo
T1G4012036-FL
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- T1G
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 18.4 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 36 V
- Id - Continuous Drain Current
- 12 A
- Output Power
- 24 W
- Maximum Drain Gate Voltage
- - 2.9 V
- Pd - Power Dissipation
- 117 W
- Operating Frequency
- 3.3 GHz
- Product
- GaN RF Power Transistors
- Type
- GaN SiC HEMT
Show more parameters (2)
- Moisture Sensitive
- Yes
- Part # Aliases
- 1096176
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.