ON Semiconductor
NST3906DP6T5G
Bipolar Transistors - BJT DUAL PNP GP TRANS SOT-963
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NST3906DP6
- Package
- SOT-963-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.2 A
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 60 at 100 uA, 1 V
- Height
- 0.37 mm
- Length
- 1 mm
Show more parameters (3)
- Width
- 0.8 mm
- DC Collector/Base Gain hfe Min
- 60
- Pd - Power Dissipation
- 280 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.