ROHM Semiconductor
2SCR513PT100
Bipolar Transistors - BJT TRANS GP BJT NPN 50V 1A 4PIN
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SCR513p
- Package
- MPT-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.13 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 360 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 2 W
Show more parameters (1)
- Part # Aliases
- 2SCR513P
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.