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Diodes Incorporated

MMST2907AQ-7

Bipolar Transistors - BJT 60V PNP Small Signal Transistor

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Package
SOT-323-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 60 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 1.6 V
Maximum DC Collector Current
- 600 mA
Gain Bandwidth Product fT
200 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 600 mA
Show more parameters (3)
DC Collector/Base Gain hfe Min
50
Pd - Power Dissipation
200 mW
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMST2907AQ-7 Specifications and Datasheet | ChipSourceHub