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Renesas / Intersil

HFA3135IHZ96

RF Bipolar Transistors W/ANNEAL TXARRAY 2X PNP MATCHED INDEL

Basic Information

View Datasheet ↗
Manufacturer
Renesas Electronics
Brand
Renesas / Intersil
Product Category
RF Bipolar Transistors
Series
HFA3135
Package
SOT-23
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

21 parameters
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
PNP
DC Collector/Base Gain hfe Min
15
Collector- Emitter Voltage VCEO Max
11 V
Emitter- Base Voltage VEBO
4.5 V
Continuous Collector Current
0.026 A
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Configuration
Dual
Collector- Base Voltage VCBO
12 V
DC Current Gain hFE Max
15 at 10 mA at 2 V, 151 mA at 2 V, 150.1 mA at 2 V, 1510 mA at 5 V, 151 mA at 5 V, 150.1 mA at 5 V
Show more parameters (9)
Height
1.15 mm
Length
2.9 mm
Operating Frequency
7000 MHz (Typ)
Type
RF Bipolar Small Signal
Width
1.6 mm
Gain Bandwidth Product fT
7000 MHz (Typ)
Maximum DC Collector Current
0.026 A
Moisture Sensitive
Yes
Unit Weight
0.000635 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

HFA3135IHZ96 Specifications and Datasheet | ChipSourceHub