Toshiba
RN1105MFV,L3F
Bipolar Transistors - Pre-Biased VESM PLN TRANSISTOR Pd 150mW F 1MHz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1105
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 2.2 kOhms
- Typical Resistor Ratio
- 0.0468
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Height
- 0.5 mm
Show more parameters (4)
- Length
- 1.2 mm
- Type
- NPN Epitaxial Silicon Transistor
- Width
- 0.8 mm
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.