Central Semiconductor
MJ10012
Bipolar Transistors - BJT 10A 175W 600Vcbo 400Vceo 6A Ic 5.0Vce
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJ10012
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 600 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- DC Current Gain hFE Max
- 2000
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 100
- Pd - Power Dissipation
- 175 W
- Part # Aliases
- MJ10012 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.