Toshiba
RN1961(TE85L,F)
Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 50mW F 1MHz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Package
- US-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Configuration
- Dual
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 30
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 10 V
Show more parameters (2)
- Channel Mode
- Enhancement
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.