Microchip Technology
2N3737UB/TR
Bipolar Transistors - BJT 40V 1.5A 500mW 3-Pin CER Small-Signal BJT SMT TR
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- LCC-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1.5 A
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Pd - Power Dissipation
- 1 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Collector/Base Gain hfe Min
- 20 at 1 A, 1.5 V
Show more parameters (1)
- DC Current Gain hFE Max
- 150 at 500 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.