IXYS
IXTA80N10T
MOSFET 80 Amps 100V 13.0 Rds
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTA80N10
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 105 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 14 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 60 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 230 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- TrenchMV
- Height
- 4.83 mm
- Length
- 9.65 mm
- Transistor Type
- 1 N-Channel
- Type
- TrenchMV Power MOSFET
- Width
- 10.41 mm
- Forward Transconductance - Min
- 33 S
- Fall Time
- 48 ns
- Rise Time
- 54 ns
- Typical Turn-Off Delay Time
- 40 ns
- Typical Turn-On Delay Time
- 31 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.