ROHM Semiconductor
UMG4NTR
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-353
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- UMG4N
- Package
- UMT-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Dual Common Emitter
- Transistor Polarity
- NPN
- Typical Input Resistor
- 10 kOhms
- DC Collector/Base Gain hfe Min
- 100
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 600
- Emitter- Base Voltage VEBO
- 5 V
- Height
- 0.77 mm
Show more parameters (4)
- Length
- 2 mm
- Width
- 1.7 mm
- Part # Aliases
- UMG4N
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.