Qorvo
QPD1017
RF JFET Transistors 500 Watt, 50 Volt, 3.1 - 3.5 GHz, GaN RF IMFET
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- 17.4 mm x 24 mm x 4.31 mm
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 15.7 dB
- Transistor Polarity
- N-Channel
- Id - Continuous Drain Current
- 20 A
- Output Power
- 460 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 511 W
- Configuration
- Single
- Operating Frequency
- 3.1 GHz to 3.5 GHz
Show more parameters (2)
- Development Kit
- QPD1017PCB4B01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.