Microchip Technology
2N2946AUB/TR
Bipolar Transistors - BJT 35V 200mA 400mW Round-End Small-Signal BJT TR
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- SMD-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 40 V
- Pd - Power Dissipation
- 400 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Collector/Base Gain hfe Min
- 50 at - 1 mA, - 500 mV
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.