IXYS
IXTA80N12T2
MOSFET TrenchT2 MOSFETs Power MOSFETs
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXTA80N12
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
10 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 17 mOhms
- Configuration
- Single
- Tradename
- HiPerFET
- Transistor Type
- 1 N-Channel
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.