Infineon Technologies
BSL308PEH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 130 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- - 1.2 nC, - 1.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 500 mW (1/2 W)
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 1.1 mm
- Length
- 3 mm
- Transistor Type
- 1 P-Channel
- Width
- 1.5 mm
- Forward Transconductance - Min
- 4.6 S, 4.6 S
- Fall Time
- 2.8 ns, 2.8 ns
- Rise Time
- 7.7 ns, 7.7 ns
- Typical Turn-Off Delay Time
- 15.3 ns, 15.3 ns
- Typical Turn-On Delay Time
- 5.6 ns, 5.6 ns
- Part # Aliases
- BSL308PE H6327 SP001101004
- Unit Weight
- 0.000526 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.