Toshiba
2SC5198-O(S1,E,S)
Bipolar Transistors - BJT BIP TO3PN
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- Through Hole
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 140 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 5 V
- Pd - Power Dissipation
- 100 W
- Gain Bandwidth Product fT
- 30 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 35
- DC Current Gain hFE Max
- 160
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.