Diodes Incorporated
DXTN3C100PSQ-13
Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- PowerDI5060-8
- Mounting Style
- SMD/SMT
- Packaging
- 8 V
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 225 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current
- 3 A
Show more parameters (5)
- DC Collector/Base Gain hfe Min
- 10
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 5 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.003422 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.