Nexperia
BCM856DS,115
Bipolar Transistors - BJT COMPLEX DISCRETE S2023D/SOT45
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SC-74-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 65 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 200 mV
- Maximum DC Collector Current
- - 200 mA
- Gain Bandwidth Product fT
- 175 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Height
- 1 mm (Max)
Show more parameters (7)
- Length
- 3.1 mm (Max)
- Width
- 1.7 mm (Max)
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 380 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000381 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.