MACOM
CGH09120F
GaN FETs GaN HEMT UHF-2.5GHz, 120 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Id - Continuous Drain Current
- 28 A
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 56 W
- Configuration
- Single
- Country of Origin
- US
- Gain
- 21 dB
- Maximum Drain Gate Voltage
- 28 V
- Maximum Operating Frequency
- 2.5 GHz
Show more parameters (5)
- Minimum Operating Frequency
- 300 MHz
- Output Power
- 20 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.