Nexperia
PBSS4160DSH
Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 220 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500 at 1 mA, 5 V
Show more parameters (5)
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 250 at 1 mA, 5 V
- Pd - Power Dissipation
- 700 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000705 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.