STMicroelectronics
BUT70W
Bipolar Transistors - BJT NPN High Power
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BUT70W
- Package
- TO-247-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 125 V
- Collector- Base Voltage VCBO
- 200 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Maximum DC Collector Current
- 70 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 20.15 mm
- Length
- 15.75 mm
- Width
- 5.15 mm
Show more parameters (2)
- Pd - Power Dissipation
- 200 W
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.