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ON Semiconductor

MJE371G

Bipolar Transistors - BJT 4A 40V 40W PNP

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
MJE371
Package
TO-225-3
Mounting Style
SMD/SMT
Packaging
Bulk
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
4 V
Maximum DC Collector Current
4 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Height
11.04 mm
Length
7.74 mm
Width
2.66 mm
Continuous Collector Current
4 A
Show more parameters (3)
DC Collector/Base Gain hfe Min
40
Pd - Power Dissipation
40 W
Unit Weight
0.004949 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MJE371G Specifications and Datasheet | ChipSourceHub